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Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate

Received: 18 April 2014     Accepted: 6 May 2014     Published: 30 May 2014
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Abstract

The interaction of a dense compressed nitrogen plasma flow with a system of Ta-Ti layers on a silicon substrate has been investigated. This plasma flow was generated in a quasi-stationary pulsed plasma accelerator that can provide a supersonic high energy plasma flux. The plasma pulse duration, discharge current, concentration, and energy densities absorbed by the target were 100 µs, 80 kA, 1018 cm−3, and 3–13 J/cm2 respectively. The samples were exposed to a single plasma pulseor to a series of pulses and were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive X-ray analyses. The result showed that the changes in the elemental and structure phase compositions depends on energy and number of plasma pulses. Formation of Ti5Si3 and Ta2N, are the main results of the current research.

Published in International Journal of Materials Science and Applications (Volume 3, Issue 3)
DOI 10.11648/j.ijmsa.20140303.14
Page(s) 92-99
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Pulsed Plasma, Surface Modification, Metal Silicide

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    Amir Hossein Sari, Valentin Mironovich Astashynski, Anton Mikhailovich Kuzmitski, Vladimir Vasilevich Uglov. (2014). Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate. International Journal of Materials Science and Applications, 3(3), 92-99. https://doi.org/10.11648/j.ijmsa.20140303.14

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    Amir Hossein Sari; Valentin Mironovich Astashynski; Anton Mikhailovich Kuzmitski; Vladimir Vasilevich Uglov. Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate. Int. J. Mater. Sci. Appl. 2014, 3(3), 92-99. doi: 10.11648/j.ijmsa.20140303.14

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    AMA Style

    Amir Hossein Sari, Valentin Mironovich Astashynski, Anton Mikhailovich Kuzmitski, Vladimir Vasilevich Uglov. Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate. Int J Mater Sci Appl. 2014;3(3):92-99. doi: 10.11648/j.ijmsa.20140303.14

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  • @article{10.11648/j.ijmsa.20140303.14,
      author = {Amir Hossein Sari and Valentin Mironovich Astashynski and Anton Mikhailovich Kuzmitski and Vladimir Vasilevich Uglov},
      title = {Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate},
      journal = {International Journal of Materials Science and Applications},
      volume = {3},
      number = {3},
      pages = {92-99},
      doi = {10.11648/j.ijmsa.20140303.14},
      url = {https://doi.org/10.11648/j.ijmsa.20140303.14},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140303.14},
      abstract = {The interaction of a dense compressed nitrogen plasma flow with a system of Ta-Ti layers on a silicon substrate has been investigated. This plasma flow was generated in a quasi-stationary pulsed plasma accelerator that can provide a supersonic high energy plasma flux. The plasma pulse duration, discharge current, concentration, and energy densities absorbed by the target were 100 µs, 80 kA, 1018 cm−3, and 3–13 J/cm2 respectively. The samples were exposed to a single plasma pulseor to a series of pulses and were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive X-ray analyses. The result showed that the changes in the elemental and structure phase compositions depends on energy and number of plasma pulses. Formation of Ti5Si3 and Ta2N, are the main results of the current research.},
     year = {2014}
    }
    

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  • TY  - JOUR
    T1  - Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate
    AU  - Amir Hossein Sari
    AU  - Valentin Mironovich Astashynski
    AU  - Anton Mikhailovich Kuzmitski
    AU  - Vladimir Vasilevich Uglov
    Y1  - 2014/05/30
    PY  - 2014
    N1  - https://doi.org/10.11648/j.ijmsa.20140303.14
    DO  - 10.11648/j.ijmsa.20140303.14
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 92
    EP  - 99
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20140303.14
    AB  - The interaction of a dense compressed nitrogen plasma flow with a system of Ta-Ti layers on a silicon substrate has been investigated. This plasma flow was generated in a quasi-stationary pulsed plasma accelerator that can provide a supersonic high energy plasma flux. The plasma pulse duration, discharge current, concentration, and energy densities absorbed by the target were 100 µs, 80 kA, 1018 cm−3, and 3–13 J/cm2 respectively. The samples were exposed to a single plasma pulseor to a series of pulses and were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive X-ray analyses. The result showed that the changes in the elemental and structure phase compositions depends on energy and number of plasma pulses. Formation of Ti5Si3 and Ta2N, are the main results of the current research.
    VL  - 3
    IS  - 3
    ER  - 

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Author Information
  • B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 70Nezavisimosti Ave., Minsk 220072, Belarus

  • A.V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15, P. Brovki Str., Minsk 220072, Belarus

  • A.V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15, P. Brovki Str., Minsk 220072, Belarus

  • Belarusian State University, Nezavisimosti Ave., Minsk 220030, Belarus

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