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New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films

Received: 1 May 2014     Accepted: 17 May 2014     Published: 30 May 2014
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Abstract

In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).

Published in International Journal of Materials Science and Applications (Volume 3, Issue 3)
DOI 10.11648/j.ijmsa.20140303.15
Page(s) 100-105
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Microcrystalline Silicon, Atmospheric Adsorption Instability, Stretched-Exponential Decay, Band-Bending

References
[1] S. Veprek, Z. Iqbal, R. O. Kuhne, P. Capezzuto, F-A. Sarott and J. K. Gimzewski, “Properties of mi-crocrystalline silicon IV. Electrical conductivity, electron spin resonance and the effect of gas adsorption”, J. Phys. C: Solid State Phys,.vol. 16, 6241 (1983).
[2] V. Smirnov, S. Reynolds, C. Main, F. Finger, R. Carius, “Aging effects in microcrystalline silicon films studied by transient pho-toconductivity”, J. Non-Cryst. Solids, vol.338, 421 (2004).
[3] F. Finger, R. Carius, T. Dylla, S. Klein, S. Okur, M. Gunes, “Instability phenomena in microcrystalline silicon films”, J. of Optoelec-tronics and Advanced Materials, vol. 7(1), 83 (2005).
[4] R. Reynolds, V. Smirnov, F. Finger, R. Carius, “Transport and instabilities in microcrystalline silicon”, J. of Optoelectronics and Advanced Materials, vol. 7(1), 91 (2005).
[5] M. Gunes, R.E. Jonson, S. O. Kasap, F. Finger, and A. Lam-bertz, “The effect of aging on the dark conductivity and 1/f noise in hydrogenated microcrystalline silicon thin films”, Phys. Status Solidi., vol. C7 No. 3-4, 658 (2010).
[6] G. Yilmaz, E. Turan, M. Gunes, V. Smirnov, F. Finger, and R. Bruggemann, “Instability effects in hydrogenated micro-crystalline silicon thin films”, Phys. Status Solidi., vol. C7 No. 3-4, 700 (2010).
[7] R. Brugge-mann and N. Souffi, “Metastable dark and photoconductive properties of microcrystalline silicon”, J. Non-Cryst. Solids, vol. 352, 1079 (2006).
[8] M. Günes, H. Cansever, G. Yilmaz, V. Smirnov, F. Finger, R. Bruggemann, “Metastability effects in hydrogenated microcrystalline silicon thin films investigated by the dual beam photoconductivity method”, J. Non-Cryst. Solids, vol.358, 2074 (2012).
[9] A. Rose, "Concepts in Photoconductivity and allied problems“, edited by R. E. Marshak (Interscience Publishers, New York•London, 1963) p. 51
[10] J. Kakalios, R. A. Street, and W. B. Jackson, “Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon”, Phys. Rev. Lett., vol.59(9), 1037 (1987).
[11] L. Van Hove, "The Occurrence of Singularities in the Elastic Frequency Distribution of a Crystal," Phys. Rev., vol. 89, 1189 (1953).
[12] Hyuk-Ryeol Park, Dong-Sun Oh, Jin Jang, and Hoe-Sup Soh, “Optical absorption spectra of a-Si:H film in TFT structure”,Solid. St. Commun., vol. 97(1), 45 (1996).
[13] Hyuk-Ryeol Park, Dong-Sun Oh, Jin Jang, “Changes in bulk defect density of hy-drogenated amorphous silicon by bias stress in thin film transistor structure”, Appl. Phys. Lett., vol. 68(22), 3135 (1996).
[14] F. R. Libsch J. Kanicki, “Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors”, Appl. Phys. Lett., vol.62(11), 1286 (1993).
[15] M. J. Powell, "Charge Trapping Instabilities in Amorphous Silicon-Silicon Nitride ThinFilm Transistors," Applied Physics Letters, vol. 43, 597 (1983).
[16] J. Triska, J. F. Conley, R. Presley, and J. F. Wager, "Bias stress stability of zinc-tin-oxidethin-film transistors with Al2O3 gate dielectrics”, Journal of Vacuum Science &Technology B,vol.28, C5i1-C5i6, (2010).
[17] S. Zafar, A. Callegari, E. Gusev, and M. V. Fi-schetti, "Charge trapping related thresholdvoltage instabilities in high permittivity gate dielectric stacks," J. Appl.Phys., vol.93, 9298 (2003).
[18] A. V. Gelatos and J. Kanicki, "Bias Stress-Induced Instabilities in Amorphous-SiliconNitride Hydrogenated Amorphous-Silicon Struc-tures - Is the Carrier-Induced DefectCreation Model Correct," Appl. Phys. Lett., vol. 57. 1197 (1990).
[19] C. C. Shih, Y. S. Lee, K. L. Fang, C. H. Chen, and F. Y. Gan, "A current estimation method for bias-temperature stress of a-Si TFT device", IEEE Transactions on Device and Mate-rials Reliability, vol. 7, 347 (2007).
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  • APA Style

    Tae-Hyeon Lim, Hyuk-Ryeol Park. (2014). New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. International Journal of Materials Science and Applications, 3(3), 100-105. https://doi.org/10.11648/j.ijmsa.20140303.15

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    ACS Style

    Tae-Hyeon Lim; Hyuk-Ryeol Park. New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. Int. J. Mater. Sci. Appl. 2014, 3(3), 100-105. doi: 10.11648/j.ijmsa.20140303.15

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    AMA Style

    Tae-Hyeon Lim, Hyuk-Ryeol Park. New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films. Int J Mater Sci Appl. 2014;3(3):100-105. doi: 10.11648/j.ijmsa.20140303.15

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  • @article{10.11648/j.ijmsa.20140303.15,
      author = {Tae-Hyeon Lim and Hyuk-Ryeol Park},
      title = {New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films},
      journal = {International Journal of Materials Science and Applications},
      volume = {3},
      number = {3},
      pages = {100-105},
      doi = {10.11648/j.ijmsa.20140303.15},
      url = {https://doi.org/10.11648/j.ijmsa.20140303.15},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140303.15},
      abstract = {In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).},
     year = {2014}
    }
    

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    T1  - New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films
    AU  - Tae-Hyeon Lim
    AU  - Hyuk-Ryeol Park
    Y1  - 2014/05/30
    PY  - 2014
    N1  - https://doi.org/10.11648/j.ijmsa.20140303.15
    DO  - 10.11648/j.ijmsa.20140303.15
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 100
    EP  - 105
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20140303.15
    AB  - In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (μc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in μc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).
    VL  - 3
    IS  - 3
    ER  - 

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Author Information
  • Department of Physics, Mokpo National University, Muan, Jeonnam, Republic of Korea, 534-729

  • Department of Physics, Mokpo National University, Muan, Jeonnam, Republic of Korea, 534-729

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